Junior researcher Normurodov Asror Bazarovich Office phone: (+998-71)-289-26-94 email:normurodov@inp.uz

Fields of interest:

Materials science, computer modeling of the structure and properties of nanoscale silicon clusters

Papers

1.    Umarova F.T.,Mukhtarov A.P.,Tereshuk P.L., Sulaymanov N.T., Normurodov A.B., Swihart M.T. Quantum chemical investigation of the hollow nano-sized silicon clusters, Uzbek J. Phys.(V11, N4, 2009, pp.268-272).
2.    Mukhtarov A.P., Umarova F.T., Tereshuk P.L., Sulaymanov N.T., Normurodov A.B., Swihart M.T. Quantum-chemical investigation of the structure and stability Si_nH _m(n=2-7, m=2-16) clusters , Uzbek J. Phys.(V10, N2, 2008, pp.85-94).
3.    Tereshchuk P.L., Umarova F.T., Mukhtarov A.P., Sulaymanov N.T.,Normurodov A.B., Swihart M.T. Influence of a vacancy on structural parameters and energetic characteristics of the silicon Si38 and Si38H30 clusters– In: 7-th International Conference Modern problems of nuclear physics, Abstracts, Tashkent, Uzbekistan, September 22-25, 2009, p.148-149
4.    Sulaymanov N.T., Umarova F.T., Tursunov N.A., Mukhtarov A.P., Tereshchuk P.L., Normurodov A.B., Swihart M.T. Influence of the passivation manner of the free surface bands and existence of the vacancy on photoluminescence properties of the silicon clusters. 7th International Conference on Nuclear and Radiation Physics, Sept. 8-11, 2009, Almaty, Kazakhstan, p.171
5.    Tereshchuk P.L., Mukhtarov A.P., Umarova F.T., Sulaymanov N.T., Normurodov A., Swihart M.T. Quantum chemical investigation of the structure and stability of the hollow spherical silicon clusters. Ibid, p. 174.
6.    A.P. Mukhtarov, A.B. Normurodov, Sh. Makhkamov. Structure and Optoelectronic Properties of the mixed Hydrogen-Hydrocarbon coated Silicon Si29 nanoparticles by Non-conventional Tight-Binding method, Abstracts, International Conference For Nanotechnology Industries The Leading Technology of 21st Century, Riyadh, Saudi Arabia, 2009.
7.    A.P. Mukhtarov, P.L. Tereshchuk, N.T. Sulaymonov, A.B. Normurodov, M.T. Swihart. Simulation of growth patterns of silicon nanoparticles by non-conventional tight-binding molecular dynamics, Abstracts, International Conference on Electronic Materials, Sydney, Australia, 2008.