menyu
Новости

Normurodov Asror Bazarovich


Junior researcher

Normurodov Asror Bazarovich

Office phone:
(+998-71)-289-36-53

email: normurodov @ inp.uz


Fields of interest:

Materials science, computer modeling of the structure and electronic properties of silicon nanoscale


Papers

  • M.Yu. Tashmetov, A.B. Normurodov, N.T. Sulaymonov, Sh. Makhkamov, F.T. Umarova, A.V. Khugaev, Kh.M. Kholmedov. Nanosize Structures and Energy Parameters of Doped Silicon Clusters Passivated by Hydrogen. J. Nano- Electron. Phys. V. 10, No 3, pp.03011-1-03011-6, (2018).
  • A.P. Mukhtarov, A.B. Normurodov, N.T. Sulaymonov, F.T. Umarova, Sh. Makhkamov. Structure and Charge States of the Selected Hydrogenated Silicon Clusters Si2 -Si8 by Non-Conventional Tight-Binding Method. J. Nano- Electron. Phys. V. 8, No 2, pp.02009-1-02009-8, (2016).
  • A.P. Mukhtarov , A. B. Normurodov, N.T. Sulaymonov, F.T. Umarova. Charge States of Bare Silicon Clusters up to Si8 by Non-Conventional Tight-Binding Method. J. Nano- Electron. Phys. V. 7, No 1, pp.01012-1-01012-7, (2015).
  • A. B. Normurodov, A.P. Mukhtarov , P.Kholikov, F.T. Umarova, N.T. Sulaymonov, S. Bakiev, Sh.M. Makhkamov. Influence of surface passivation on the structure and electronic properties of silicon clusters. Uzbek Journal of Physics, V16, №1, 2014, pp.35-41.
  • F. T. Umarova, A. B. Normurodov and N. N. Turaeva. Size-dependent structural properties of quasi-one-dimensional silicon clusters. Physica status solidi (c), Volume 9, Issue 10-11, pages 1904–1907, (2012).
  • F.T.Umarova, P.L.Tereschuk, A.B.Normurodov. The stability of hollow silicon nanoclusters. Uzbek Journal of Physics, V12, N3, 2010, pp. 117-120.
  • Umarova F.T.,Mukhtarov A.P.,Tereshuk P.L., Sulaymanov N.T., Normurodov A.B., Swihart M.T. Quantum chemical investigation of the hollow nano-sized silicon clusters, Uzbek Journal of Physics, V11, N4, 2009, pp.268-272.


Book Chapters

  • F.T. Umarova, P.L. Tereshchuk, and A.B. Normurodov. Quasi-One-Dimensional Silicon Clusters as Elements of Novel Nanowires. Nanodevices and Nanomaterials for Ecological Security, Y.N. Shunin and A.E. Kiv (eds.), NATO Science for Peace and Security Series B: Physics and Biophysics, 2012, Chapter 13, pp.143-148, DOI: 10.1007/978-94-007-4119-5_13.


Conference Presentations

  • Makhkamov Sh., Normurodov А.B., Sulaymonov N.T., Tashmetov M.Yu. Hydrogen interactions with impurity and intrinsic point defects in silicon nanoparticles. // 11th International Conference on Nuclear and Radiation Physics, Sept. 12-15, 2017, Almaty, Kazakhstan, p.273
  • Normurodov A.B., Mukhtarov A.P., Sulaymonov N.T., Umarova F.T., Tereshchuk P.L. Quantum chemical simulation of surface effects in nanosilicon.- International conference “Nuclear science and its application”, Samarkand, Uzbekistan, September 25-28, 2012. P.208.
  • A.P. Mukhtarov, A.B.Normurodov,M.T. Swihart. Oxidation of the hydrogen and hydrocarbon covered nanosilicon. EMRS-Spring meeting, Strasbourg, France, May 14-18, 2012, p.17-57.
  • Tereshchuk P.L., Umarova F.T., Mukhtarov A.P., Sulaymanov N.T.,Normurodov A.B., Swihart M.T. Influence of a vacancy on structural parameters and energetic characteristics of the silicon Si38 and Si38H30 clusters– In: 7-th International Conference Modern problems of nuclear physics, Abstracts, Tashkent, Uzbekistan, September 22-25, 2009, p.148-149
  • Sulaymanov N.T., Umarova F.T., Tursunov N.A., Mukhtarov A.P., Tereshchuk P.L., Normurodov A.B., Swihart M.T. Influence of the passivation manner of the free surface bands and existence of the vacancy on photoluminescence properties of the silicon clusters. 7th International Conference on Nuclear and Radiation Physics, Sept. 8-11, 2009, Almaty, Kazakhstan, p.171
  • Tereshchuk P.L., Mukhtarov A.P., Umarova F.T., Sulaymanov N.T., Normurodov A., Swihart M.T. Quantum chemical investigation of the structure and stability of the hollow spherical silicon clusters. Ibid, p. 174.
  • A.P. Mukhtarov, A.B. Normurodov, Sh. Makhkamov. Structure and Optoelectronic Properties of the mixed Hydrogen-Hydrocarbon coated Silicon Si29 nanoparticles by Non-conventional Tight-Binding method, Abstracts, International Conference For Nanotechnology Industries The Leading Technology of 21st Century, Riyadh, Saudi Arabia, 2009.
  • A.P. Mukhtarov, P.L. Tereshchuk, N.T. Sulaymonov, A.B. Normurodov, M.T. Swihart. Simulation of growth patterns of silicon nanoparticles by non-conventional tight-binding molecular dynamics, Abstracts, International Conference on Electronic Materials, Sydney, Australia, 2008.


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